ADDRESS: 3# Plant, No. 3232, BeiMen Road, High-tech Development Zone, Kunshan
The conventional wet chemical method removes the photoresist on the surface of the wafer and has the disadvantages that the reaction cannot be accurately controlled, the cleaning is not thorough, and impurities are easily introduced. The plasma treatment as a dry method has a high controllability and good consistency, and can not only completely remove the photoresist and other organic substances, but also activate and roughen the wafer surface and improve the wettability of the wafer surface.
|Wafer, Plasma treatment||Before plasma: 52.76°||After plasma:3.62°|