ADDRESS: 3# Plant, No. 3232, BeiMen Road, High-tech Development Zone, Kunshan
Considering performance and cost considerations, microelectronic packaging currently uses copper alloy materials with good thermal conductivity, conductivity, and processability as lead frames. Copper oxides and other organic contaminants can lead to delamination of the seal molding and the copper lead frame, resulting in poor sealing performance and chronic gas seepage after encapsulation, as well as affecting chip bonding and wire bonding quality. After the plasma treatment of the copper lead frame, organic and oxide layers can be removed, while the surface is activated and roughened to ensure the reliability of wire bonding and packaging.
|Lead frame size：238 mm×70mm||Before plasma:92.49°||After plasma:37.5°|
Copper lead frame before and after plasma cleaning water drop angle contrast